Yazar "Gul, Fatih" için listeleme
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Addressing the sneak-path problem in crossbar RRAM devices using memristor-based one Schottky diode-one resistor array
Gul, Fatih (Elsevier, 2019)Resistive random access memories (ARAMs) are favorable contenders in the race towards future technologies. Moreover, the desirable properties of memristor-based RRAM devices make them very good competitors in this field. ... -
Bipolar resistive switching and conduction mechanism of an Al/ZnO/Al-based memristor
Gul, Fatih; Efeoglu, Hasan (Academic Press Ltd- Elsevier Science Ltd, 2017)In this study, a direct-current reactive sputtered AliZnO/Al-based memristor device was fabricated and its resistive switching (RS) characteristics investigated. The optical and structural properties were confirmed by using ... -
Carrier transport mechanism and bipolar resistive switching behavior of a nano-scale thin film TiO2 memristor
Gul, Fatih (Elsevier Sci Ltd, 2018)A titanium dioxide (TiO2) based memristor device having an active layer thickness of 10 nm was fabricated using radio frequency (RF) reactive sputtering and its resistive switching characteristics and carrier transport ... -
Circuit Implementation of Nano-Scale TiO2 Memristor Using Only Metal-Oxide-Semiconductor Transistors
Gul, Fatih (IEEE-Inst Electrical Electronics Engineers Inc, 2019)A metal-oxide-semiconductor (MOS)-based circuit model that emulates a TiO2 memristor is proposed in this study. First, a TiO2 (10-nm active layer thickness)based memristor device was fabricated. The structural properties ... -
The Fabrication and MOSFET-Only Circuit Implementation of Semiconductor Memristor
Babacan, Yunus; Yesil, Abdullah; Gul, Fatih (IEEE-Inst Electrical Electronics Engineers Inc, 2018)In this paper, a ZnO-based semiconductor thin film memristor (300 nm in thickness) device is fabricated using metallic top and bottom electrodes by direct-current reactive magnetron sputter. The memristive characteristics ... -
A novel OTA-based circuit model corroborated by an experimental semiconductor memristor
Gul, Fatih; Babacan, Yunus (Elsevier Science Bv, 2018)A semiconductor memristor device based on a 300-nm ZnO thin film was fabricated by direct-current reactive sputter. The memristive behavior of this device was confirmed by time dependent current-voltage (I-V-t) measurements, ... -
ZnO and ZnO1-x based thin film memristors: The effects of oxygen deficiency and thickness in resistive switching behavior
Gul, Fatih; Efeoglu, Hasan (Elsevier Sci Ltd, 2017)In this study, direct-current reactive sputtered ZnO and ZnO1-x based thin film (30 nm and 300 nm in thickness) memristor devices were produced and the effects of oxygen vacancies and thickness on the memristive characteristics ...
