A New Window Function for Memristor Modeling

Abstract

Memristor was proposed by Chua in 1971 as a fourth circuit element in addition to the resistor, capacitor and inductor. In 2008, a group of engineers from HP laboratories announced that they were producing a memristor as a physical device. After that, many studies on the memristor were started. Some of these studies are about modeling of the memristor. One of the widely used methods in modeling of the memristor is a non-linear model in which window functions are used. Here, the window function is a way to take into account of boundary conditions that are not considered in the linear model. Several different window functions are available in the literature that can be used in modeling of the memristor. However, some of them seem to not provide some qualifications that will influence the perfection of the model when examined. In this study, a new window function is proposed which can be used to model the behavior of the memristor. This function consists of rearranging the Gaussian function with various parameters. These parameters change the form of the window function. As a result, this new window function satisfies model qualities such as boundary effect, linkage with linear dopant drift model, scalability, flexibility, boundary lock. It also allows the modeling of different memristor constructions through various parameters in the window function.